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 DAN 208 / DAP 208 (1.2 W) Silicon-Twin Diodes Center tap Silizium-Doppeldioden Mittelpunktschaltung
Nominal power dissipation Nenn-Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung 3 Pin-Plastic case 3 Pin-Kunststoffgehause Weight approx. - Gewicht ca.
Dimensions / Mae in mm
1.2 W 150 V
8.5 x 3.5 x 6.6 [mm] 0.6 g see page 22 s. Seite 22
Standard packaging: bulk Standard Lieferform: lose im Karton
"DAP": common anodes / gemeinsame Anoden
"DAN": common cathodes / gemeinsame Kathoden
Maximum ratings Type Typ DAN 208 DAP 208 Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 100 100
Grenzwerte Surge peak reverse voltage Stospitzensperrspannung VRSM [V] 150 150
Max. average forward rectified current, R-load, for one diode operation only for simultaneous operation Dauergrenzstrom in Einwegschaltung mit R-Last, fur eine einzelne Diode bei gleichzeitigem Betrieb Peak forward surge current, 50 Hz half sine-wave Stostrom fur eine 50 Hz Sinus-Halbwelle
TA = 25/C
IFAV IFAV IFAV IFAV IFSM
1.0 A 1) 2.0 A 1) 1.0 A 1) 2.0 A 1) 10 A
TU = 25/C
TA = 25/C
1
) Leads kept at ambient temperature at a distance of 3 mm from case Anschludrahte in 3 mm Abstand von Gehause auf Umgebungstemperatur gehalten 28.02.2002
354
DAN 208 / DAP 208 (1.2 W) Operating junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS - 50...+150/C - 50...+150/C
Characteristics Forward voltage Durchlaspannung Leakage current Sperrstrom Tj = 25/C Tj = 25/C IF = 1 A VR = 100 V VF IR RthA
Kennwerte < 1.2 V 1) < 10 :A < 45 K/W 2)
Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft
1 2
) Valid for one diode - Gultig fur eine Diode ) Leads kept at ambient temperature at a distance of 3 mm from case Anschludrahte in 3 mm Abstand von Gehause auf Umgebungstemperatur gehalten 28.02.2002
355


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